Wielopikselowy detektor promieniowania THz zrealizowany z wykorzystaniem selektywnych tranzystorów MOS i jego zastosowanie w biologii, medycynie i systemach bezpieczeństwa
2013
- C. Kołaciński, D. Obrębski, „Design of Analog Integrated Readout Circuit for NMOS THz Detectors”, Proc. of the 20th Int. Conf. Mixed Design of Integrated Circuits and Systems. Gdynia, 20-22.06.2013, str. 222-228, (referat)
- D. Obrębski, A. Szymański, J. Marczewski, D. Tomaszewski, M. Grodner, J. Pieczyński, „Development of Ionizing Radiation Detectors Integrated with Readout Electronics”, Proc. of the 20th Int. Conf. Mixed Design of Integrated Circuits and Systems. Gdynia, 20-22.06.2013, str. 229-234, (referat)
- J. Marczewski, K. Kucharski, D. Tomaszewski, P. Grabiec, J. Łusakowski, K. Karpierz, M. Białek, P. Kopyt, W. Gwarek, P. Zagrajek, W. Knap „Si Metal-Oxide-Semiconductor Field-Effect Transistor for THz Detection”, Mat. konf. The International Joint Sinano/Nanofunction/New Member States-Eastern Europe/ENI2 Workshop on Advanced Process and Device Integration and Innovative Nanofunctions in Nanoelectronics, Kijów, 8-11.04.2013, (referat)
- G. Głuszko, D. Tomaszewski, J. Malesińska, K. Kucharski, „A Simple Method for Extraction of Threshold Voltage of FD SOI MOSFETs”, Proceedings of the 20th Int. Conf. Mixed Design of Integrated Circuits and Systems, Gdynia, 20-22.06.2013, str. 101-105, (referat)
- P. Zagrajek, et al., "THz optical element for the field effect transistor detectors", THz Days and GDR-I Network Meeting (THZ2013), Cargese 25-27.03.2013, (referat)
